2SD667D Bipolar Transistor

Characteristics of 2SD667D Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 120 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 0.9 W
  • DC Current Gain (hfe): 160 to 320
  • Transition Frequency, min: 140 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92MOD

Pinout of 2SD667D

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD667D transistor can have a current gain of 160 to 320. The gain of the 2SD667 will be in the range from 60 to 320, for the 2SD667B it will be in the range from 60 to 120, for the 2SD667C it will be in the range from 100 to 200.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD667D might only be marked "D667D".

Complementary PNP transistor

The complementary PNP transistor to the 2SD667D is the 2SB647D.

Replacement and Equivalent for 2SD667D transistor

You can replace the 2SD667D with the 2SC2383, 2SC2383-Y, 2SC3228, 2SC3228-Y, KSC2383, KSC2383Y, KTC3228, KTC3228Y or NTE382.
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