2SD1616A-U Bipolar Transistor

Characteristics of 2SD1616A-U Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 120 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 0.75 W
  • DC Current Gain (hfe): 300 to 600
  • Transition Frequency, min: 160 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of 2SD1616A-U

The 2SD1616A-U is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1616A-U transistor can have a current gain of 300 to 600. The gain of the 2SD1616A will be in the range from 135 to 400, for the 2SD1616A-K it will be in the range from 200 to 400, for the 2SD1616A-L it will be in the range from 135 to 270.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1616A-U might only be marked "D1616A-U".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1616A-U is the 2SB1116A-U.
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