2SD1277-Q Bipolar Transistor

Characteristics of 2SD1277-Q Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 45 W
  • DC Current Gain (hfe): 2000 to 5000
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F

Pinout of 2SD1277-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1277-Q transistor can have a current gain of 2000 to 5000. The gain of the 2SD1277 will be in the range from 2000 to 10000, for the 2SD1277-P it will be in the range from 4000 to 10000, for the 2SD1277A it will be in the range from 2000 to 10000, for the 2SD1277A-P it will be in the range from 4000 to 10000, for the 2SD1277A-Q it will be in the range from 2000 to 5000.


Sometimes the "2S" prefix is not marked on the package - the 2SD1277-Q might only be marked "D1277-Q".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1277-Q is the 2SB951-Q.

Replacement and Equivalent for 2SD1277-Q transistor

You can replace the 2SD1277-Q with the 2N6043, 2N6043G, 2N6044, 2N6044G, 2N6045, 2N6045G, 2N6387, 2N6387G, 2N6388, 2N6388G, 2N6530, 2N6531, 2N6532, 2N6533, 2SD1192, 2SD1196, 2SD1827, 2SD1830, BD203, BD303, BD535, BD537, BD543A, BD543B, BD543C, BD545A, BD545B, BD545C, BD645, BD647, BD649, BD651, BD797, BD799, BD801, BD807, BD809, BD897, BD897A, BD899, BD899A, BD901, BDT63, BDT63A, BDT63B, BDT63C, BDT65, BDT65A, BDT65B, BDT65C, BDT81, BDT81F, BDT83, BDT83F, BDT85, BDT85F, BDT87, BDT87F, BDW40, BDW41, BDW41G, BDW42, BDW42G, BDW43, BDW73A, BDW73B, BDW73C, BDW73D, BDX33A, BDX33B, BDX33BG, BDX33C, BDX33CG, BDX33D, BDX53A, BDX53B, BDX53BG, BDX53C, BDX53CG, BDX53D, BDX77, D44H11, D44H11FP, D44H8, MJE15028, MJE15028G, TIP100, TIP100G, TIP101, TIP101G, TIP102, TIP102G, TIP130, TIP130G, TIP131, TIP131G, TIP132, TIP132G, TIP140T, TIP141T or TIP142T.
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