2SD1207 Bipolar Transistor

Characteristics of 2SD1207 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 50 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 2 A
  • Collector Dissipation: 1 W
  • DC Current Gain (hfe): 100 to 560
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92MOD

Pinout of 2SD1207

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1207 transistor can have a current gain of 100 to 560. The gain of the 2SD1207-R will be in the range from 100 to 200, for the 2SD1207-S it will be in the range from 140 to 280, for the 2SD1207-T it will be in the range from 200 to 400, for the 2SD1207-U it will be in the range from 280 to 560.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1207 might only be marked "D1207".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1207 is the 2SB892.

SMD Version of 2SD1207 transistor

The 2SD1622 (SOT-89) and 2SD1623 (SOT-89) is the SMD version of the 2SD1207 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SD1207 transistor

You can replace the 2SD1207 with the 2SD1347 or 2SD1835.
If you find an error please send an email to mail@el-component.com