2SB951-P Bipolar Transistor

Characteristics of 2SB951-P Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -8 A
  • Collector Dissipation: 45 W
  • DC Current Gain (hfe): 4000 to 10000
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F

Pinout of 2SB951-P

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB951-P transistor can have a current gain of 4000 to 10000. The gain of the 2SB951 will be in the range from 2000 to 10000, for the 2SB951-Q it will be in the range from 2000 to 5000.


Sometimes the "2S" prefix is not marked on the package - the 2SB951-P might only be marked "B951-P".

Complementary NPN transistor

The complementary NPN transistor to the 2SB951-P is the 2SD1277-P.

Replacement and Equivalent for 2SB951-P transistor

You can replace the 2SB951-P with the 2N6040, 2N6040G, 2N6041, 2N6041G, 2N6042, 2N6042G, 2N6667, 2N6667G, 2N6668, 2N6668G, 2SB1225, 2SB1228, 2SB882, 2SB886, 2SB951A, 2SB951A-P, BD204, BD304, BD536, BD538, BD544A, BD544B, BD544C, BD546A, BD546B, BD546C, BD646, BD648, BD650, BD652, BD798, BD800, BD802, BD808, BD810, BD898, BD898A, BD900, BD900A, BD902, BDT62, BDT62A, BDT62B, BDT62C, BDT64, BDT64A, BDT64B, BDT64C, BDT82, BDT82F, BDT84, BDT84F, BDT86, BDT86F, BDT88, BDT88F, BDW45, BDW46, BDW46G, BDW47, BDW47G, BDW48, BDW74A, BDW74B, BDW74C, BDW74D, BDX34A, BDX34B, BDX34BG, BDX34C, BDX34CG, BDX34D, BDX54A, BDX54B, BDX54BG, BDX54C, BDX54CG, BDX54D, BDX78, D45H11, D45H11FP, D45H8, MJE15029, MJE15029G, MJF6668, MJF6668G, TIP105, TIP105G, TIP106, TIP106G, TIP107, TIP107G, TIP135, TIP135G, TIP136, TIP136G, TIP137, TIP137G, TIP145T, TIP146T or TIP147T.
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