2SB950A Bipolar Transistor

Characteristics of 2SB950A Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 2000 to 10000
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F

Pinout of 2SB950A

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB950A transistor can have a current gain of 2000 to 10000. The gain of the 2SB950A-P will be in the range from 4000 to 10000, for the 2SB950A-Q it will be in the range from 2000 to 5000.


Sometimes the "2S" prefix is not marked on the package - the 2SB950A might only be marked "B950A".

Complementary NPN transistor

The complementary NPN transistor to the 2SB950A is the 2SD1276A.

Replacement and Equivalent for 2SB950A transistor

You can replace the 2SB950A with the 2N6041, 2N6041G, 2N6042, 2N6042G, 2N6668, 2N6668G, 2SA1488A, 2SA771, 2SB1020, 2SB1020A, 2SB1024, 2SB1227, 2SB1228, 2SB1481, 2SB601, 2SB673, 2SB674, 2SB751A, 2SB885, 2SB886, 2SB951A, BD244B, BD244C, BD538, BD540B, BD540C, BD544B, BD544C, BD546B, BD546C, BD648, BD650, BD652, BD800, BD802, BD810, BD900, BD900A, BD902, BD952, BD954, BD956, BDT60A, BDT60B, BDT60C, BDT62A, BDT62B, BDT62C, BDT64A, BDT64B, BDT64C, BDT84, BDT84F, BDT86, BDT86F, BDT88, BDT88F, BDW24B, BDW24C, BDW46, BDW46G, BDW47, BDW47G, BDW48, BDW54B, BDW54C, BDW54D, BDW64B, BDW64C, BDW64D, BDW74B, BDW74C, BDW74D, BDX34B, BDX34BG, BDX34C, BDX34CG, BDX34D, BDX54B, BDX54BG, BDX54C, BDX54CG, BDX54D, BDX54E, BDX54F, BDX78, D44C10, D44C11, D44C12, D45C10, D45C11, D45C12, D45H11, D45H11FP, MJE15029, MJE15029G, MJE15031, MJE15031G, MJE702T, MJE703T, MJF127, MJF127G, MJF15031, MJF15031G, TIP106, TIP106G, TIP107, TIP107G, TIP126, TIP126G, TIP127, TIP127G, TIP136, TIP136G, TIP137, TIP137G, TIP146T, TIP147T or TTB1020B.
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