2SB881 Bipolar Transistor

Characteristics of 2SB881 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -70 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -7 A
  • Collector Dissipation: 35 W
  • DC Current Gain (hfe): 2000
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SB881

Here is an image showing the pin diagram of this transistor.


Sometimes the "2S" prefix is not marked on the package - the 2SB881 might only be marked "B881".

Complementary NPN transistor

The complementary NPN transistor to the 2SB881 is the 2SD1191.

Replacement and Equivalent for 2SB881 transistor

You can replace the 2SB881 with the 2SB1020, 2SB1020A, 2SB1224, 2SB1225, 2SB673, 2SB674, 2SB675, 2SB882, 2SB951, 2SB951-P, 2SB951-Q, 2SB951A, 2SB951A-P, 2SB951A-Q, MJF6668, MJF6668G or TTB1020B.
If you find an error please send an email to mail@el-component.com