2SB633-F Bipolar Transistor

Characteristics of 2SB633-F Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -85 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -6 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 160 to 320
  • Transition Frequency, min: 5 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SB633-F

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB633-F transistor can have a current gain of 160 to 320. The gain of the 2SB633 will be in the range from 40 to 320, for the 2SB633-C it will be in the range from 40 to 80, for the 2SB633-D it will be in the range from 60 to 120, for the 2SB633-E it will be in the range from 100 to 200.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB633-F might only be marked "B633-F".

Complementary NPN transistor

The complementary NPN transistor to the 2SB633-F is the 2SD613-F.

SMD Version of 2SB633-F transistor

The BDP954 (SOT-223) is the SMD version of the 2SB633-F transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB633-F transistor

You can replace the 2SB633-F with the BD244C, BD544C, BD546C, BD802, BDT86, BDT86F, BDT88, BDT88F, MJE15029, MJE15029G, MJE15031, MJE15031G, MJF15031 or MJF15031G.
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