2SB560-D Bipolar Transistor

Characteristics of 2SB560-D Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.7 A
  • Collector Dissipation: 0.9 W
  • DC Current Gain (hfe): 60 to 120
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92MOD

Pinout of 2SB560-D

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB560-D transistor can have a current gain of 60 to 120. The gain of the 2SB560 will be in the range from 60 to 560, for the 2SB560-E it will be in the range from 100 to 200, for the 2SB560-F it will be in the range from 160 to 320, for the 2SB560-G it will be in the range from 280 to 560.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB560-D might only be marked "B560-D".

Complementary NPN transistor

The complementary NPN transistor to the 2SB560-D is the 2SD438-D.

SMD Version of 2SB560-D transistor

The 2SA1368 (SOT-89) and 2SA1368-C (SOT-89) is the SMD version of the 2SB560-D transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB560-D transistor

You can replace the 2SB560-D with the 2SA1013, 2SA1013R, 2SA1275, 2SA1275-R, 2SB647, 2SB647A, 2SB647AB, 2SB647B, KSA1013, KSA1013R, KTA1275 or KTA1275R.
If you find an error please send an email to mail@el-component.com