2SB1367 Bipolar Transistor

Characteristics of 2SB1367 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -5 A
  • Collector Dissipation: 30 W
  • DC Current Gain (hfe): 40 to 240
  • Transition Frequency, min: 5 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F

Pinout of 2SB1367

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1367 transistor can have a current gain of 40 to 240. The gain of the 2SB1367-O will be in the range from 70 to 140, for the 2SB1367-R it will be in the range from 40 to 80, for the 2SB1367-Y it will be in the range from 120 to 240.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1367 might only be marked "B1367".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1367 is the 2SD2059.

SMD Version of 2SB1367 transistor

The BDP954 (SOT-223) is the SMD version of the 2SB1367 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB1367 transistor

You can replace the 2SB1367 with the 2SB1016, 2SB595, 2SB995, BD244C, BD540C, BD802, BD954, BD956, BDT86, BDT86F, BDT88, BDT88F, KTB1367, MJE15029, MJE15029G, MJE15031, MJE15031G, MJF15031 or MJF15031G.
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