2SB1253 Bipolar Transistor

Characteristics of 2SB1253 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -110 V
  • Collector-Base Voltage, max: -130 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -6 A
  • Collector Dissipation: 50 W
  • DC Current Gain (hfe): 5000 to 30000
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3PF

Pinout of 2SB1253

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1253 transistor can have a current gain of 5000 to 30000. The gain of the 2SB1253-P will be in the range from 5000 to 15000, for the 2SB1253-Q it will be in the range from 8000 to 30000.


Sometimes the "2S" prefix is not marked on the package - the 2SB1253 might only be marked "B1253".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1253 is the 2SD1893.

Replacement and Equivalent for 2SB1253 transistor

You can replace the 2SB1253 with the 2SB1254, 2SB1255 or 2SB1625.
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