2SA1369 Bipolar Transistor

Characteristics of 2SA1369 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -20 V
  • Collector-Base Voltage, max: -30 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -1.5 A
  • Collector Dissipation: 0.5 W
  • DC Current Gain (hfe): 400 to 1200
  • Transition Frequency, min: 90 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-89

Pinout of 2SA1369

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1369 transistor can have a current gain of 400 to 1200. The gain of the 2SA1369-G will be in the range from 400 to 800, for the 2SA1369-H it will be in the range from 600 to 1200.


Sometimes the "2S" prefix is not marked on the package - the 2SA1369 might only be marked "A1369".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1369 is the 2SC3439.

Replacement and Equivalent for 2SA1369 transistor

You can replace the 2SA1369 with the 2STF2340.
If you find an error please send an email to mail@el-component.com