2SA1365 Bipolar Transistor

Characteristics of 2SA1365 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -20 V
  • Collector-Base Voltage, max: -25 V
  • Emitter-Base Voltage, max: -4 V
  • Collector Current − Continuous, max: -0.7 A
  • Collector Dissipation: 0.15 W
  • DC Current Gain (hfe): 150 to 800
  • Transition Frequency, min: 180 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-23

Pinout of 2SA1365

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1365 transistor can have a current gain of 150 to 800. The gain of the 2SA1365-E will be in the range from 150 to 300, for the 2SA1365-F it will be in the range from 250 to 500, for the 2SA1365-G it will be in the range from 400 to 800.


Sometimes the "2S" prefix is not marked on the package - the 2SA1365 might only be marked "A1365".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1365 is the 2SC3440.
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