2SA1085-E Bipolar Transistor

Characteristics of 2SA1085-E Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.4 W
  • DC Current Gain (hfe): 400 to 800
  • Transition Frequency, min: 90 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of 2SA1085-E

The 2SA1085-E is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1085-E transistor can have a current gain of 400 to 800. The gain of the 2SA1085 will be in the range from 250 to 800, for the 2SA1085-D it will be in the range from 250 to 500.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1085-E might only be marked "A1085-E".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1085-E is the 2SC2547-E.

SMD Version of 2SA1085-E transistor

The FJV992 (SOT-23) and FJV992-E (SOT-23) is the SMD version of the 2SA1085-E transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SA1085-E transistor

You can replace the 2SA1085-E with the 2SA1082, 2SA1082-E, 2SA1285, 2SA1285-G or 2SA1285A.
If you find an error please send an email to mail@el-component.com