2N6110 Bipolar Transistor

Characteristics of 2N6110 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -70 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -7 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 30 to 150
  • Transition Frequency, min: 10 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of 2N6110

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the 2N6110 is the 2N6289.

Replacement and Equivalent for 2N6110 transistor

You can replace the 2N6110 with the 2N6107, 2N6107G, 2N6491, 2N6491G, BD710, BD712, BD744B, BD744C, BD800, BD802, BD810, BD910, BD912, BDT94, BDT94F, BDT96, BDT96F, BDX78 or NTE197.
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